Figure 4 : Migration of dislocation-originated SFT during deformation.

From: Atomic-scale dynamic process of deformation-induced stacking fault tetrahedra in gold nanocrystals

Figure 4

(a) Under tensile loading, two dislocation-originated SFT (SFT1 and SFT2) are produced sequentially. (b) Upon further deformation, a group of partial dislocations (indicated by the white arrows) nucleate from the TB and interact with SFT2. (c) Structure of the partial dislocation group, which consists of four parallel leading partials with SFs. The yellow arrow indicates the strain contrast induced by dislocation–SFT2 interaction. (df) The dislocation group drives SFT2 to migrate, as indicated by the changes of distance and atomic layers between SFT1 and SFT2 on the (111) and (1) plane, respectively. Insets in (b) and (d,e) are the changes of atomic layers between SFT1 and SFT2 on the (111) and (1) plane, respectively. Scale bar in (a,b,df), 2 nm; Scale bar in (c), 1 nm.