Figure 1: Ga-assisted GaAs1−xPx nanowires grown directly on silicon. | Nature Communications

Figure 1: Ga-assisted GaAs1−xPx nanowires grown directly on silicon.

From: Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon

Figure 1

(a) Scanning electron microscope image of GaAsP nanowires, each having a Ga droplet on top. The nanowires are seen from above at an angle of 25°. Scale bar, 1 μm. (b) Transmission electron microscope image showing the upper part of a GaAsP nanowire with only a few twinnings visible just below the Ga droplet and further down the nanowire. Scale bar, 200 nm. Inset: diffraction image showing the nanowires zinc-blende crystal structure, expanded in Supplementary Fig. S3. (c) Energy-dispersive X-ray spectroscopy characterization of P content (x-value) in two nanowires from the same growth. The variation in P during the first 1 μm of the growth is due to a deliberate flux change, whereas the downward slope is under a constant flux.

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