Figure 2 : Thickness-dependent electronic properties of the γ-Al2O3/STO interface.

From: A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

Figure 2

(ac) Temperature dependence of sheet resistance, Rs, carrier density, ns, and low-field electron Hall mobility, μHall, for the interface conduction at different film thicknesses. (d,e) Thickness dependence of the sheet conductance, σs, and ns measured at 300 K. High-mobility 2DEGs are obtained at a thickness range of 2 uc≤d<3 uc. The lines are guides to the eye.