Figure 5: Test of electro-mechanical stability of solution-processed OFETs during bending. | Nature Communications

Figure 5: Test of electro-mechanical stability of solution-processed OFETs during bending.

From: Ultra-flexible solution-processed organic field-effect transistors

Figure 5

(a) Dependence of the normalized mobility on the bending radius, R, and bending angle, α (open pentagons: TIPS-pentacene, solid rhombs: TES-ADT). R and α are defined by the shape of the wedge-like support structures, against which the OFETs are bent (inset). α=180° corresponds to a flat (planar) OFET geometry, and α=0 corresponds to an OFET wrapped around a half circle. The measurements have been carried out with the devices in a bent configuration (under strain), in air, under laboratory illumination. (b) An example of the transfer characteristics of a TES-ADT OFET in the linear regime at VSD=1 V (upper panel) and saturation regime at VSD=−30 V (lower panel) recorded during bending of the device to various radii.

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