(a) Growth of single InAsP quantum dots embedded in InP nanowires on an InP substrate. (b) PDMS is spin-coated and subsequently cured to obtain a thin layer (∼10 μm) comparable to the nanowire length. (c) Embedded nanowires in PDMS are removed from the InP substrate using tweezers and a razor blade to scrape the substrate surface. (d) An 80-nm gold layer is evaporated at the nanowire base. The red dots in (a–d) indicate the quantum dots in individual nanowires. (e) Optical image of finished flexible device containing very bright single-photon emitters, which are held between two tweezers. (f,g) SEM images of the as-grown sample before (f) and after (g) nanowire transfer. As there are no nanowires remaining in (g), we conclude that 100% of nanowires are successfully transferred into PDMS. Scale bar: 10 μm. The insets of (f) and (g) show a magnified view of their respective image with scale bar of 1 μm.