Figure 4: Spin current relaxation. | Nature Communications

Figure 4: Spin current relaxation.

From: Observation of the inverse spin Hall effect in silicon

Figure 4

(a) The spin current density generated by the spin pumping for τsf=9 ps. Here is the spin current density at the interface when the external magnetic field is applied along the film plane (θ=0). The parameters used for the calculation are shown in the text. (b) An equivalent circuit model of the Ni81Fe19/p-Si film. RF is the electrical resistance of the Ni81Fe19 layer. (c) A simplified equivalent circuit model of the Ni81Fe19/p-Si film. (d) The spin relaxation time τsf dependence of the ISHE signal VISHE at θ=80° calculated from equation (5).

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