(a) Tunability of the direct bandgap of InxGa(1−x)As as a function of the molar ratio x of InAs. (b) Pseudocolour plot of the scattering cross-section Csca of an In0.15Ga0.85As nanodisk for a varying disk diameter d and of the incident wavelength. The incident field is linearly polarized along the Ex direction. The white dashed line highlights the region where the scattering is suppressed by the presence of anapole states. (c) Scattering cross-section for an In0.15Ga0.85As nanodisk of diameter d=440 nm and height h=100 nm. For these choice of parameters, the anapole wavelength coincides with the semiconductor emission wavelength λ0 (red arrow). The red shaded area shows the Lorentzian gain profile of the In0.15Ga0.85As semiconductor that is entirely contained in the scattering suppression region.