Figure 2 : STM break-junction experiments of gold–nonadiyne–silicon junctions.

From: Single-molecule electrical contacts on silicon electrodes under ambient conditions

Figure 2

(a) Schematic of the STM junction experiment describing the formation and breakdown of the Au–nonadiyne–Si junction. (b) Example of a captured ‘blink’ when a 1,8-nonadiyne molecule bridges the two electrodes at −0.8 V (see blinks at different biases in Supplementary Fig. 1 and Supplementary Note 1). Current jumps (blinks) above the set-point tunnelling current appear when the nonadiyne molecule bridges the gap between the gold and the silicon electrodes. (c) Captured current response during a voltage bias ramp of an Au–nonadiyne–SiHD junction (see the current response for the low-doped silicon system, Au–nonadiyne–SiLD, in Supplementary Fig. 2). When a blink is detected, the working bias was ramped between +2 and −2 V at 2 Hz of frequency (16 V s−1). The current is continuously monitored after the bias ramp to ensure that the junction does not breakdown during the voltage ramp. Surface set-bias plots of b,c represent the evolution of the applied working bias voltage between the Si substrate and the STM Au-tip electrodes.