Figure 4: Statistical Raman analysis of the 2D GaS films. | Nature Communications

Figure 4: Statistical Raman analysis of the 2D GaS films.

From: Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

Figure 4

Raman line scan analysis. (a) Optical image, the line scan was performed on the black line indicated. (b) Contour plot with phonon modes indicated. (c) Relative intensity of the E12g phonon peak with standard error indicated. The measurements and analysis show a good uniformity for the deposited bilayer GaS. The relative intensity of the E12g peak is shown to present a standard error of only 2.5% across an area spanning 100 μm.

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