Table 2 OECT performance of p(gNDI-gT2).

From: N-type organic electrochemical transistors with stability in water

Device size (W, L) [μm] Accumulation mode peak currents [μA] peak g m (at | V D |=0.6) [μS] * I ON/OFF
100, 10 n-type 3.85 21.7 3.21 × 103
  p-type −1.45 13.4 2.01 × 102
50, 50 n-type 0.47 2.72 5.41 × 102
  p-type
  1. Thickness of the active layer is 200 nm.
  2. *Gate voltage for peak gm (VG=0.5 V, (n-type) and (VG=−0.8 V, (p-type)).
  3. Low currents for the 50,50 device (p-type) lead to unreliable extraction of device parameters.