(a) Schottky barrier height ΦB versus VG extracted from the temperature-dependence of dark current measurements. Inset: Arrhenius plot of the dark current at different VG and VB=0.36 V. Experimental data are represented by blue dots and the solid black lines are linear fits. The error bars in the main panel correspond to the standard deviation obtained from these fits. (b) PC versus ΦB and laser power P, measured (left plot) and according to our PTI model (right plot). PC is measured at room temperature, with Ephoton=0.8 eV and VB=0.36 V. (c) PC versus ΦB for different values of P and (d) PC versus P for various values of ΦB taken from b. The data points correspond to the experiment and the solid black lines to the model. The upper horizontal axis shows the rise in electronic temperature ΔT=Te−T0 (extracted from the fit of the model to the experiment). Insets of c,d: same experimental data and theoretical curves in logarithmic scale.