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High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity


The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology1,2,3. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers4, provide ideal semiconducting materials with high electrical carrier mobility5,6,7,8,9,10, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect11, bandgap modulation12, indirect-to-direct bandgap transition13, piezoelectricity14 and valleytronics15. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal–organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm2 V−1 s−1 at room temperature and 114 cm2 V−1 s−1 at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three-dimensional circuitry. Our work is a step towards the realization of atomically thin integrated circuitry.

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Figure 1: Wafer-scale monolayer TMD films.
Figure 2: MOCVD growth of continuous monolayer MoS2 film.
Figure 3: Electrical characterization and batch fabrication of monolayer TMD FETs.
Figure 4: Multi-stacking of MoS2/SiO2 structure.


  1. Rogers, J. A., Someya, T. & Huang, Y. Materials and mechanics for stretchable electronics. Science 327, 1603–1607 (2010).

    ADS  CAS  Article  Google Scholar 

  2. Ko, H. et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature 468, 286–289 (2010).

    ADS  CAS  Article  Google Scholar 

  3. Mitzi, D. B., Kosbar, L. L., Murray, C. E., Copel, M. & Afzali, A. High-mobility ultrathin semiconducting films prepared by spin coating. Nature 428, 299–303 (2003).

    ADS  Article  Google Scholar 

  4. Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419–425 (2013).

    CAS  Article  Google Scholar 

  5. Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys. Rev. B 85, 115317 (2012).

    ADS  Article  Google Scholar 

  6. Baugher, B. W. H., Churchill, H. O. H., Yang, Y. & Jarillo-Herrero, P. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2 . Nano Lett. 13, 4212–4216 (2013).

    ADS  CAS  Article  Google Scholar 

  7. Radisavljevic, B. & Kis, A. Mobility engineering and a metal–insulator transition in monolayer MoS2 . Nature Mater. 12, 815–820 (2013).

    ADS  CAS  Article  Google Scholar 

  8. Schmidt, H. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett. 14, 1909–1913 (2014).

    ADS  CAS  Article  Google Scholar 

  9. Jariwala, D. et al. Band-like transport in high mobility unencapsulated single-layer MoS2 transistors. Appl. Phys. Lett. 102, 173107 (2013).

    ADS  Article  Google Scholar 

  10. Ovchinnikov, D. et al. Electrical transport properties of single-layer WS2 . ACS Nano 8, 8174–8181 (2014).

    CAS  Article  Google Scholar 

  11. Ye, Z. et al. Probing excitonic dark states in single-layer tungsten disulphide. Nature 513, 214–218 (2014).

    ADS  CAS  Article  Google Scholar 

  12. Feng, Q. et al. Growth of large-area 2D MoS2(1−x)Se2x semiconductor alloys. Adv. Mater. 26, 2648–2653 (2014).

    CAS  Article  Google Scholar 

  13. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

    ADS  Google Scholar 

  14. Wu, W. et al. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics. Nature 514, 470–474 (2014).

    ADS  CAS  Article  Google Scholar 

  15. Mak, K. F., McGill, K. L., Park, J. & McEuen, P. L. The valley Hall effect in MoS2 transistors. Science 344, 1489–1492 (2014).

    ADS  CAS  Article  Google Scholar 

  16. Lin, Y.-C. et al. Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization. Nanoscale 4, 6637–6641 (2012).

    ADS  CAS  Article  Google Scholar 

  17. Song, I. et al. Patternable large-scale molybdenium disulfide atomic layers grown by gold-assisted chemical vapor deposition. Angew. Chem. Int. Ed. 53, 1266–1269 (2014).

    CAS  Article  Google Scholar 

  18. Najmaei, S. et al. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nature Mater. 12, 754–759 (2013).

    ADS  CAS  Article  Google Scholar 

  19. Van der Zande, A. M. et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nature Mater. 12, 554–561 (2013).

    ADS  CAS  Article  Google Scholar 

  20. Lee, Y.-H. et al. Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. Nano Lett. 13, 1852–1857 (2013).

    ADS  CAS  Article  Google Scholar 

  21. Liu, H. et al. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Nano Lett. 13, 2640–2646 (2013).

    ADS  CAS  Article  Google Scholar 

  22. Yu, Y. et al. Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep. 3, 1866 (2013).

    Article  Google Scholar 

  23. Zhang, Y. et al. Controlled growth of high-quality monolayer WS2 layers on sapphire. ACS Nano 7, 8963–8971 (2013).

    CAS  Article  Google Scholar 

  24. Zhao, W. et al. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2 . ACS Nano 7, 791–797 (2013).

    CAS  Article  Google Scholar 

  25. Li, H. et al. From bulk to monolayer MoS2: evolution of Raman scattering. Adv. Funct. Mater. 22, 1385–1390 (2012).

    ADS  CAS  Article  Google Scholar 

  26. Berkdemir, A. et al. Identification of individual and few layers of WS2 using Raman spectroscopy. Sci. Rep. 3, 1755 (2013).

    Article  Google Scholar 

  27. King, D. A. & Woodruff, D. P. Growth and Properties of Ultrathin Epitaxial Layers (Elsevier, 1997).

    Google Scholar 

  28. Connor, R. & Adkins, H. Hydrogenolysis of oxygenated organic compounds. J. Am. Chem. Soc. 54, 4678–4690 (1932).

    CAS  Article  Google Scholar 

  29. Cristol, S. et al. Theoretical study of the MoS2 (100) surface: a chemical potential analysis of sulfur and hydrogen coverage. J. Phys. Chem. B 104, 11220–11229 (2000).

    CAS  Article  Google Scholar 

  30. Najmaei, S. et al. Electrical transport properties of polycrystalline monolayer molybdenum disulfide. ACS Nano 8, 7930–7937 (2014).

    CAS  Article  Google Scholar 

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We thank P. L. McEuen, M.-H. Jo, H. Heo and H.-C. Choi for discussions, and M. Guimaraes and Z. Ziegler for help in preparing the manuscript. This work was supported mainly by the AFOSR (FA2386-13-1-4118 and FA9550-11-1-0033) and the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (2012M3A7B4049887). Additional funding was provided by the National Science Foundation (NSF) through the Cornell Center for Materials Research (NSF DMR-1120296) and by the Samsung Advanced Institute for Technology GRO Program. Device fabrication was performed at the Cornell NanoScale Facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (ECS-0335765).

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Authors and Affiliations



K.K. and S.X. contributed equally to this work. K.K, S.X. and J.P. conceived the experiments. K.K. and S.X. performed the synthesis, optical characterization, device fabrication, and electrical measurements. L.H. conducted low-temperature electrical measurement, with assistance from K.F.M. Y.H, P.Y.H. and D.A.M. performed atomic resolution STEM imaging. K.K. carried out DF-TEM and data analysis, with assistance from C.-J.K. K.K, S.X. and J.P. wrote the manuscript. All authors discussed the results and commented on the manuscript.

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Correspondence to Jiwoong Park.

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The authors declare no competing financial interests.

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Kang, K., Xie, S., Huang, L. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015).

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