Abstract
Owing to its high carrier mobility and saturation velocity, graphene has attracted enormous attention in recent years1,2,3,4,5. In particular, high-performance graphene transistors for radio-frequency (r.f.) applications are of great interest6,7,8,9,10,11,12,13. Synthesis of large-scale graphene sheets of high quality and at low cost has been demonstrated using chemical vapour deposition (CVD) methods14. However, very few studies have been performed on the scaling behaviour of transistors made from CVD graphene for r.f. applications, which hold great potential for commercialization. Here we report the systematic study of top-gated CVD-graphene r.f. transistors with gate lengths scaled down to 40 nm, the shortest gate length demonstrated on graphene r.f. devices. The CVD graphene was grown on copper film and transferred to a wafer of diamond-like carbon. Cut-off frequencies as high as 155 GHz have been obtained for the 40-nm transistors, and the cut-off frequency was found to scale as 1/(gate length). Furthermore, we studied graphene r.f. transistors at cryogenic temperatures. Unlike conventional semiconductor devices where low-temperature performance is hampered by carrier freeze-out effects, the r.f. performance of our graphene devices exhibits little temperature dependence down to 4.3 K, providing a much larger operation window than is available for conventional devices.
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References
Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197–200 (2005)
Zhang, Y. B., Tan, Y. W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry’s phase in graphene. Nature 438, 201–204 (2005)
Berger, C. et al. Electronic confinement and coherence in patterned epitaxial graphene. Science 312, 1191–1196 (2006)
Avouris, P. Graphene: electronic and photonic properties and devices. Nano Lett. 10, 4285–4294 (2010)
Lemme, M. C., Echtermeyer, T. J., Baus, M. & Kurz, H. A graphene field-effect device. IEEE Electron Device Lett. 28, 282–284 (2007)
Lin, Y.-M. et al. Operation of graphene transistors at gigahertz frequencies. Nano Lett. 9, 422–426 (2009)
Meric, I., Baklitskaya, N., Kim, P. & Shepard, K. L. RF performance of top-gated, zero-bandgap graphene field-effect transistors. Tech. Dig. IEDM 1–4 10.1109/IEDM.2008.4796738 (2008)
Lin, Y.-M. et al. Development of graphene FETs for high frequency electronics. Tech. Dig. IEDM 237–240 10.1109/IEDM.2009.5424378 (2009)
Lin, Y.-M. et al. 100 GHz transistors from wafer-scale epitaxial graphene. Science 327, 662 (2010)
Moon, J. S. et al. Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates. IEEE Electron Device Lett. 30, 650–652 (2009)
Liao, L. et al. High-speed graphene transistors with a self-aligned nanowire gate. Nature 467, 305–308 (2010)
Lee, J. et al. RF performance of pre-patterned locally-embedded-back-gate graphene device. Tech. Dig. IEDM 568–571 10.1109/IEDM.2010.5703422 (2010)
Schwierz, F. Graphene transistors. Nature Nanotechnol. 5, 487–496 (2010)
Li, X. S. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312–1314 (2009)
Han, M. Y., Özyilmaz, B., Zhang, Y. B. & Kim, P. Energy band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98, 206805 (2007)
Wang, X. et al. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors. Phys. Rev. Lett. 100, 206803 (2008)
Chen, Z., Lin, Y.-M., Rooks, M. J. & Avouris Graphene nano-ribbon electronics. Physica E 40, 228–232 (2007)
Li, X., Wang, X., Zhang, L., Lee, S. & Dai, H. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319, 1229–1232 (2008)
Xia, F., Farmer, D. B., Lin, Y.-M. & Avouris Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Lett. 10, 715–718 (2010)
Robertson, J. Diamond-like amorphous carbon. Mater. Sci. Eng. Rep. 37, 129–281 (2002)
Lee, B. K. et al. Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics. Appl. Phys. Lett. 92, 203102 (2008)
Kim, D. H. & del Alamo, J. A. 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz. IEEE Electron Device Lett. 29, 830–833 (2008)
Gummel, H. K. On the definition of the cutoff frequency fT . Proc. IEEE 57, 2159 (1969)
Arden, W. et al. (eds) ITRS 2009 edition. 〈http://www.itrs.net/Links/2009ITRS/Home2009.htm〉 (21 June 2010)
Katsnelson, M. I., Novoselov, K. S. & Geim, A. K. Chiral tunnelling and the Klein paradox in graphene. Nature Phys. 2, 620–625 (2006)
Huard, B. et al. Transport measurements across a tunable potential barrier in graphene. Phys. Rev. Lett. 98, 236803 (2007)
Young, A. F. & Kim, P. Quantum interference and Klein tunnelling in graphene heterojunctions. Nature Phys. 5, 222–226 (2009)
Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices 3rd edn (Wiley-Interscience, 2006)
Lee, T. H. The Design of CMOS Radio-Frequency Integrated Circuits (Cambridge Univ. Press, 2004)
Acknowledgements
We thank T. Graham, B. Ek, J. Bucchignano, C. V. Jahnes and S. Han for technical assistance, and C. Y. Sung, V. Perebeinos, A. Valdes-Garcia, C. Dimitrakopoulos, W. Zhu and H.-Y. Chiu for discussions. This work was supported in part by DARPA through the CERA programme (contract FA8650-08-C-7838). The views, opinions and findings contained in this Letter are those of the authors and should not be interpreted as representing the official views or policies, either expressed or implied, of DARPA or the US Department of Defense.
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Y.W., Y.-m.L. and P.A. designed the experiment, and Y.W. performed device fabrication, electrical characterization and data analysis. Y.-m.L. and K.A.J. contributed to the r.f. characterization. A.A.B. performed graphene synthesis, and F.X. helped to prepare the DLC substrate. Y.-m.L and D.B.F. contributed to device fabrication. Y.Z. performed TEM imaging. Y.W. wrote the Letter, and Y.-m.L. and P.A. discussed and commented on the manuscript. All authors provided feedback.
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Wu, Y., Lin, Ym., Bol, A. et al. High-frequency, scaled graphene transistors on diamond-like carbon. Nature 472, 74–78 (2011). https://doi.org/10.1038/nature09979
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DOI: https://doi.org/10.1038/nature09979
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