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Solution-processed silicon films and transistors


The use of solution processes—as opposed to conventional vacuum processes and vapour-phase deposition—for the fabrication of electronic devices has received considerable attention for a wide range of applications1,2,3,4,5,6,7, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors8,9,10,11, some of which have mobilities comparable to that of amorphous silicon11 (a-Si); but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported12,13. This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon (poly-Si) films by both spin-coating and ink-jet printing, from which we fabricate TFTs with mobilities of 108 cm2 V-1 s-1 and 6.5 cm2 V-1 s-1, respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a-Si TFTs (≤ 1 cm2 V-1 s-1).

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Figure 1: Gel permeation chromatogram (GPC) of liquid precursor for Si film.
Figure 2: Thermal desorption spectrum (TDS) of solution-processed a-Si film.
Figure 3: A TEM image of a solution-processed poly-Si film.
Figure 4: The structure and characteristics of solution-processed LTPS TFTs.


  1. 1

    Shimoda, T. et al. Multicolor pixel patterning of light-emitting polymers by ink-jet printing. In 1999 SID International Symposium Digest of Technical Papers 376–379 (Society for Information Display, San Jose, 1999).

  2. 2

    Miyashita, S. et al. Full color displays fabricated by ink-jet printing. In Proc. 21st International Display Research Conference in Conjunction with 8th International Display Workshop (Asia Display / IDW '01) 1399–1402 (2001)

    Google Scholar 

  3. 3

    Peumans, P., Uchida, S. & Forrest, S. R. Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films. Nature 425, 158–162 (2003)

    ADS  CAS  Article  Google Scholar 

  4. 4

    Okamura, S., Takeuchi, R. & Shiozaki, T. Fabrication of ferroelectric Pb(Zr,Ti)3 thin films with various Zr/Ti ratios by ink-jet printing. Jpn. J. Appl. Phys. 41, 6714–6717 (2002)

    ADS  CAS  Article  Google Scholar 

  5. 5

    Tahar, R. B. H., Ban, T., Ohya, Y. & Takahashi, Y. Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method. J. Appl. Phys. 82, 865–870 (1997)

    ADS  Article  Google Scholar 

  6. 6

    Yudasaka, I., Tanaka, H., Miyasaka, M., Inoue, S. & Shimoda, T. Poly-Si thin-film transistors using polysilazane-based spin-on glass for all dielectric layers. In 2004 SID International Symposium Digest of Technical Papers 964–967 (Society for Information Display, San Jose, 2004).

  7. 7

    Furusawa, M. et al. Inkjet-printed bus and address electrodes for plasma display. In 2002 SID International Symposium Digest of Technical Papers 753–755 (Society for Information Display, San Jose, 2002)

  8. 8

    Sirringhaus, H. et al. High-resolution inkjet printing of all-polymer transistor circuits. Science 290, 2123–2126 (2000)

    ADS  CAS  Article  Google Scholar 

  9. 9

    Kawase, T., Sirringhaus, H., Friend, R. H. & Shimoda, T. All-polymer thin film transistors fabricated by high-resolution ink-jet printing. In 2000 International Electron Device Meeting (IEDM) Tech. Digest 623–626 (2000)

    Google Scholar 

  10. 10

    Gelinck, G. H. et al. Flexible active-matrix displays and shift registers based on solution-processed organic transistors. Nature Mater. 3, 106–110 (2004)

    ADS  CAS  Article  Google Scholar 

  11. 11

    Afzali, A., Dimitrakopoulos, C. D. & Breen, T. L. High-performance, solution-processed organic thin film transistors from a novel pentacene precursor. J. Am. Chem. Soc. 124, 8812–8813 (2002)

    CAS  Article  Google Scholar 

  12. 12

    Ridley, B. A., Nivi, B. & Jacobson, J. M. All-inorganic field effect transistors fabricated by printing. Science 286, 746–749 (1999)

    CAS  Article  Google Scholar 

  13. 13

    Mitzi, D. B., Kosbar, L. L., Murray, C. E., Copel, M. & Afzali, A. High-mobility ultrathin semiconducting films prepared by spin coating. Nature 428, 299–303 (2004)

    ADS  CAS  Article  Google Scholar 

  14. 14

    Aoki, T. et al. Method of manufacturing device, device, and electronic apparatus. US Patent Application 0029364 (2004).

  15. 15

    Shimoda, T. et al. Method for forming silicon film. US Patent 6541354 (2003).

  16. 16

    Kipping, F. S. Organic derivatives of silicon. Complex silicohydrocarbons [SiPh2]n . J. Chem. Soc. 125, 2291–2297 (1924)

    CAS  Article  Google Scholar 

  17. 17

    John, P., Oder, I. M. & Wood, J. The electrical conductivity of polysilane, (SiH2)x . J. Chem. Soc. Chem. Commun. 1496–1497 (1983)

  18. 18

    Suzuki, M., Kotani, J., Gyobu, S., Kaneko, T. & Saegusa, T. Synthesis of sequence-ordered polysilane by anionic ring-opening polymerization of phenylnonamethycyclopentasilane. Macromolecules 27, 2360–2363 (1994)

    ADS  CAS  Article  Google Scholar 

  19. 19

    Cypryk, M., Gupta, Y. & Matyjaszewski, K. Anionic ring-opening polymerization of 1,2,3,4-tetramethyl-1,2,3,4-tetraphenylcyclotetrasilane. J. Am. Chem. Soc. 113, 1046–1047 (1991)

    CAS  Article  Google Scholar 

  20. 20

    Hengge, E. & Bauer, G. Cyclopentasilan, das erste unsubstituierte cyclische Siliciumhydrid. Angew. Chem. 85, 304–305 (1973)

    Google Scholar 

  21. 21

    Hengge, E. & Bauer, G. Darstellung und Eigenschaften von Cyclopentasilan. Monatsh. Chem. 106, 503–512 (1975)

    CAS  Article  Google Scholar 

  22. 22

    Raabe, G. & Michl, J. Multiple bonding to silicon. Chem. Rev. 85, 419–509 (1985)

    CAS  Article  Google Scholar 

  23. 23

    Sameshima, T., Usui, S. & Sekiya, M. XeCl excimer laser annealing used in the fabrication of poly-Si TFTs. IEEE Electron Device Lett. 7, 276–278 (1986)

    ADS  Article  Google Scholar 

  24. 24

    Kitahara, K., Yamazaki, R., Kurosawa, T., Nakajima, K. & Moritani, A. Analysis of stress in laser-crystallized polysilicon thin films by Raman scattering spectroscopy. Jpn. J. Appl. Phys. 41, 5055–5059 (2002)

    ADS  CAS  Article  Google Scholar 

  25. 25

    Chatgilialoglu, C. et al. Autoxidation of poly(hydrosilane)s. Organometallics 17, 2169–2176 (1998)

    CAS  Article  Google Scholar 

  26. 26

    Morii, K. et al. Characterization of light-emitting polymer devices prepared by ink-jet printing. In Proc. 10th Int. Workshop on Inorganic and Organic Electroluminescence 357–360 (2000)

    Google Scholar 

  27. 27

    Morii, K., Masuda, T., Ishida, M., Hotta, S. & Shimoda, T. The direct patterning of crystalline organic-semiconductor films on a substrate by ink-jet printing. In Proc. Int. Conference on Synthetic Metals 126–127 (2004)

    Google Scholar 

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We thank the members of Seiko Epson Corporation's pilot line and ink-jet industrial application project, for fabricating TFTs and ink-jet experiments in this research. This work is partially supported by a grant from the New Energy and Industrial Technology Development Organization (NEDO).

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Correspondence to Masahiro Furusawa.

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Shimoda, T., Matsuki, Y., Furusawa, M. et al. Solution-processed silicon films and transistors. Nature 440, 783–786 (2006).

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