In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred to as short-channel effects. In FETs with channels made from 2D semiconductors, leakage current is almost eliminated because all electrons are confined in atomically thin channels and, hence, are uniformly influenced by the gate voltage. In this Review, we provide a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FETs in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene. We also describe tunnelling FETs that possess extremely low-power switching behaviour and explain how they can be realized using heterostructures of 2D semiconductors.
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Moore, G. E. Cramming more components onto integrated circuits. Electronics 38, 114–177 (1965).
Dennard, R. H., Gaensslen, F. H., Rideout, V. L., Bassous, E. & LeBlanc, A. R. Design of ion-implanted MOSFET's with very small physical dimensions. IEEE J. Solid-State Circ. 9, 256–268 (1974).
Mistry, K. et al. A 45 nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect layers, 193 nm dry patterning, and 100% Pb-free packaging. IEEE Int. Electron Devices Meet. 247–250 (IEEE, 2007).
Cartwright, J. Intel enters the third dimension. Naturehttp://www.nature.com/news/2011/110506/full/news.2011.274.html (2011).
Waldrop, M. M. The chips are down for Moore's law. Nature 530, 144–147 (2016).
Ferrain, I., Colinge, C. A. & Colinge, J.-P. Multi-gate transistors as the future of the classical metal-oxide-semiconductors field-effect-transistors. Nature 479, 310–316 (2011).
Colinge, J. P. Multiple-gate SOI MOSFETs. Solid State Electron. 48, 897–905 (2004).
The International Technology Roadmap for Semiconductors: 2012 Update, http://www.itrs2.net/ (ITRS, 2012).
Del Alamo, J. A. Nanometer-scale electronics with III–V compound semiconductors. Nature 479, 317–323 (2011).
Colinge, J. P. in FinFETs and Other Multi-Gate Transistors (ed Colinge, J. P ) 1–48 (Springer, 2007).
Huang, X. et al. Sub 50-nm FinFET: PMOS. Tech. Dig. Int. Electron Devices Meet. 67–70 (IEEE, 1999).
Jan, C.-H. et al. A 22 nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications. IEEE Int. Electron Devices Meet. 3.1.1–3.1.4 (IEEE, 2012).
Radosavljevic, M. et al. Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation. IEEE Int. Electron Devices Meet. 33.1.1–33.1.4 (IEEE, 2011).
Yu, B. et al. in Ultra-thin-body silicon-on-insulator MOSFETs for terabit-scale integration. Proc. Int. Semiconductor Dev. Res. Symp. 623–626 (Engineering Academic Outreach, 1997).
Li, G.-W. et al. Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts. IEEE Electron Device Lett. 33, 661–663 (2012).
Jena, D. Tunnelling transistors based on graphene and 2D crystals. Proc. IEEE 101, 1585–1602 (2013).
Kang, J. H. et al. Graphene and beyond-graphene 2D crystals for next-generation green electronics. Proc. SPIE 9083, 908305 (2014).
Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).
Avouris, P. et al. Graphene-based fast electronics and optoelectronics. IEEE Int. Electron Devices Meet. 23.1.1–23.1.4 (IEEE, 2010).
Liao, L. et al. Sub-100 nm channel length graphene transistors. Nano Lett. 10, 3952–3956 (2010).
Liao, L. et al. High-speed graphene transistors with a self-aligned nanowire gate. Nature 467, 305–308 (2010).
Xia, F. et al. Ultrafast graphene photodetector. Nat. Nanotechnol. 4, 839–843 (2009).
Bonaccorso, F., Sun, Z., Hasan, T. & Ferrari, A. C. Graphene photonics and optoelectronics. Nat. Photonics 4, 611–622 (2010).
Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722–726 (2010).
Jena, D. & Konar, A. Enhancement in carrier mobility in semiconductor nanostructures by dielectric engineering. Phys. Rev. Lett. 98, 136805 (2007).
Cui, X. et al. Multi-terminal transport measurements of MoS2 using van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534–540 (2015).
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).
Fiori, G. et al. Electronics based on two-dimensional materials. Nat. Nanotechnol. 9, 768–779 (2014).
Wang, H. et al. Integrated circuits based on bi-layer MoS2 transistors. Nano Lett. 12, 4674–4680 (2012).
Natori, K. Ballistic metal oxide semiconductor field effect transistor. J. Appl. Phys. 76, 4879–4890 (1994).
Natori, K. Scaling limit of the MOS transistor: a ballistic MOSFET. ICICE Elect. Trans. E84C, 1029–1036 (2001).
Xu, X., Yao, W., Xiao, D. & Heinz, T. F. Spin and pseudospins in layered transition metal dichalcogenides. Nat. Phys. 10, 343–350 (2014).
Rodwell, M. et al. III–V FET channel designs for high current densities and thin inversion layers. Device Res. Conf (DRC) 149–152 (IEEE, 2010).
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).
Fuhrer, M. S. & Hone, J. Measurement of mobility in dual-gate MoS2 transistor. Nat. Nanotechnol. 8, 146–147 (2013).
Wilson, J. A. & Yoffe, A. D. The transition metal dichalcogenide discussion and interpretation of the optical, electrical and structural properties. Adv. Phys. 18, 193–335 (1969).
Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109 (2009).
Schwierz, F. Graphene transistors: status, prospects, and problems. Proc. IEEE 101, 1567–1584 (2013).
Fang, T., Konar, A., Xing, H. & Jena, D. Mobility in semiconducting graphene nanoribbons: phonon, impurity, and edge roughness scattering. Phys. Rev. B: Condens. Matter 78, 205403 (2008).
Hwang, W. S. et al. Graphene nanoribbon field effect transistors on wafer scale epitaxial graphene on SiC substrates. APL Mater. 3, 011101 (2015).
Chau, R., Doyle, B., Datta, S., Kavalieros, J. & Zhang, K. Integrated nanoelectronics for the future. Nat. Mater. 6, 810–812 (2007).
Radosavljevic, M. et al. High-performance 40 nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC = 0.5V) logic applications. IEEE Int. Electron Devices Meet. 1–4 (IEEE, 2008).
Podzorov, V., Gershenson, M. E., Kloc, Ch., Zeis, R. & Bucher, E. High-mobility field-effect transistors based on transition metal dichalcogenides. Appl. Phys. Lett. 84, 3301 (2004).
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768 (2011).
Fang, H. et al. High performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett. 12, 3788–3792 (2012).
Wang, H. et al. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12, 4674–4680 (2012).
Das, S., Chen, H.-Y., Penumatcha, A. V. & Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100–105 (2012).
Larentis, S., Fallahazad, B. & Tutuc, E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl. Phys. Lett. 101, 223104 (2012).
Radisavljevic, B. & Kis, A. Mobility engineering and a metal–insulator transition in monolayer MoS2 . Nat. Mater. 12, 815–820 (2013).
Fang, H. et al. Degenerate n-doping of few layered transition metal dichalcogenides by potassium. Nano Lett. 13, 1991–1995 (2013).
Du, Y. et al. MoS2 field-effect transistors with graphene/metal heterocontacts. IEEE Electron Device Lett. 35, 599–601 (2014).
Allain, A. & Kis, A. Electron and hole mobilities in single layer WSe2 . ACS Nano 8, 7180–7185 (2014).
Jo, S., Ubrig, N., Berger, H., Kuzmenko, A. B. & Morpurgo, A. F. Mono- and bilayer WS2 light-emitting transistors. Nano Lett. 14, 2019–2025 (2014).
Lin, Y.-F. et al. Ambipolar MoTe2 transistors and their applications in logic circuits. Adv. Mater. 26, 3263–3269 (2014).
Pradhan, N. R. et al. Ambipolar molybdenum diselenide field-effect transistors: field effect and Hall mobilities. ACS Nano 8, 7923–7929 (2014).
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J. & Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 8, 1102–1120 (2014).
Gong, K. et al. Electric control of spin in monolayer WSe2 field effect transistors. Nanotechnology 25, 435201 (2014).
Kappera, R. et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 13, 1128–1134 (2014).
Schimdt, H., Giustiniano, F. & Eda, G. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects. Chem. Soc. Rev. 44, 7715–7736 (2015).
Liu, H., Neal, A. T., Zhu, Z., Tomanek, D. & Ye, P. D. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).
Koenig, S. P. et al. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106 (2014).
Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).
Buscema, M. et al. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 14, 3347–3352 (2014).
Xia, F., Wang, H. & Jia, Y. Rediscovering black phosphorus: a unique anisotropic 2D material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).
Das, S. et al. Tunable transport gap in phosphorene. Nano Lett. 14, 5733–5739 (2014).
Liu, H. et al. The effect of dielectric capping on few-layer phosphorene transistors: tuning the Schottky barrier heights. IEEE Electron Device Lett. 35, 795–797 (2014).
Deng, Y. et al. Black phosphorus–monolayer MoS2 van der Waals heterojunction p–n diode. ACS Nano 8, 8292–8299 (2014).
Wang, H. et al. Black phosphorus radio-frequency transistors. Nano Lett. 14, 6424–6429 (2014).
Haratipour, N., Robbins, M. C. & Koester, S. J. Black phosphorus p-MOSFETs with 7-nm HfO2 gate dielectric and low contact resistance. IEEE Electron. Device Lett. 36, 411–413 (2015).
Du, Y. et al. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. ACS Nano 8, 10035–10042 (2014).
Xiong, K., Luo, X. & Huang, J. C. M. Phosphorene FETs — Promising transistors based on a few layers of phosphorus atoms. IEEE MTT-S Int. Microwave Workshop Ser. Adv. Mater. Processes RF THz Appl. 1–3 (IEEE, 2015).
Tao, L. et al. Silicene field effect transistors operating at room temperature. Nat. Nanotechnol. 10, 227–231 (2015).
Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010).
Jariwala, B. et al. Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals. Chem. Mater. 28, 3352–3359 (2016).
Frindt, R. F. Superconductivity in ultrathin NbSe2 layers. Phys. Rev. Lett. 28, 299–301 (1971).
Ye, J. T. et al. Superconducting dome in a gate-tuned band insulator. Science 338, 1193–1196 (2012).
Sipos, B. et al. From Mott state to superconductivity in 1T-TaS2 . Nat. Mater. 7, 960–965 (2008).
Ayari, A., Cobas, E., Ogundadegbe, O. & Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides. J. Appl. Phys. 101, 014507 (2007).
Liu, L., Lu, Y. & Guo, J. On monolayer MoS2 field-effect transistors at the scaling limit. IEEE Trans. Electron Devices 60, 4133–4139 (2013).
Alam, K. & Lake, R. Monolayer MoS2 transistors beyond the technology road map. IEEE Trans. Electron Devices 59, 3250–3254 (2012).
Kim, S. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 3, 1011 (2012).
Enyashin, A. N. & Seifert, G. Electronic properties of MoS2 monolayer and related structures. Nanosyst. Phys. Chem. Math. 5, 517–539 (2014).
McDonnell, S. et al. Defect dominated doping and contact resistance in MoS2 . ACS Nano 8, 2880–2888 (2014).
Voiry, D. et al. The role of electronic coupling between substrate and 2D MoS2 nanosheets in electrocatalytic production of hydrogen. Nat. Mater.http://dx.doi.org/10.1038/nmat4660 (2016).
Hwang, W. S. et al. Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior. Appl. Phys. Lett. 101, 013107 (2012).
Jena, D., Banerjee, K. & Xing, G. H. 2D crystal semiconductors: Intimate contacts. Nat. Mater. 13, 1076–1078 (2014).
Allain, A., Kang, J., Kis, A. & Banerjee, K. Electrical contacts in two-dimensional semiconductors. Nat. Mater. 14, 1195–1205 (2015).
Yoon, J. et al. Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes. Small 9, 3295–3300 (2013).
Das, S., Gulotty, R., Sumant, A. V. & Roelofs, A. All two-dimensional, flexible, transparent, and thinnest thin film transistor. Nano Lett. 14, 2861–2866 (2014).
Eda, G. et al. Coherent atomic and electronic heterostructures of single layer MoS2 . ACS Nano 6, 7311–7317 (2012).
Cho, S. et al. Phase patterning of ohmic homojunction in MoTe2 . Science 348, 625–628 (2015).
Akinwande, D., Petrone, N. & Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014).
Pu, J. et al. Highly flexible MoS2 thin-film transistors with ion gel dielectrics. Nano Lett. 12, 4013–4017 (2012).
Chang, H.-Y. et al. High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems. ACS Nano 7, 5446–5452 (2013).
Zhu, W. et al. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator. Nano Lett. 15, 1883–1890 (2015).
Roy, T. et al. Field-effect transistors built from all two-dimensional material components. ACS Nano 8, 6259–6264 (2014).
Kang, K. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015).
Bridgman, P. M. Two new modifications of phosphorus. J. Am. Chem. Soc. 36, 1344–1363 (1914).
Hultgren, R., Gingrich, N. S. & Warren, B. E. The atomic distribution in red and black phosphorus and the crystal structure of black phosphorus. J. Chem. Phys. 3, 351–355 (1935).
Keys, R. W. The electrical properties of black phosphorus. Phys. Rev. 92, 580–584 (1953).
Takao, Y., Asahina, H. & Morita, A. Electronic structure of black phosphorus in tight binding approach. J. Phys. Soc. Jpn. 50, 3362–3369 (1981).
Akahama, Y., Endo, S. & Narita, S. Electrical properties of black phosphorus single crystals. J. Phys. Soc. Jpn 52, 2148–2155 (1983).
Youngblood, N., Chen, C., Koester, S. J. & Li, M. Waveguide integrated black phosphorus photodetector with high responsivity and low dark current. Nat. Photonics 9, 247–252 (2015).
Castellanos-Gomez, A. et al. Isolation and characterization of few-layer black phosphorus. 2D Mater. 1, 025001 (2014).
Gillgren, N. et al. Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures. 2D Mater. 2, 011001 (2015).
Li, L. et al. Quantum oscillations in two-dimensional electron gas in black phosphorus thin films. Nat. Nanotechnol. 10, 608–613 (2015).
Island, J. O. et al. Environmental stability of few-layer black phosphorus. 2D Mater. 2, 011002 (2015).
Kim, J. S. et al. Toward air-stable multilayer phosphorene thin-films and transistors. Sci. Rep. 5, 8989 (2015).
Du, Y. et al. Ab initio studies on atomic and electronic structures of black phosphorus. J. Appl. Phys. 107, 093718 (2010).
Avsar, A. et al. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. ACS Nano 9, 4138–4145 (2015).
Na, J. et al. Few-layer black phosphorus field-effect transistors with reduced current fluctuation. ACS Nano 8, 11753–11762 (2014).
Wood, J. D. et al. Effective passivation of exfoliated black phosphorus transistors against ambient degradation. Nano Lett. 14, 6964–6970 (2014).
Takeda, K. & Shiraishi, K. Theoretical possibility of stage corrugation in Si and Ge analogs of graphite. Phys. Rev. B: Condens. Matter 50, 14916–14922 (1994).
Cinquanta, E. et al. Getting through the nature of silicene: an sp2–sp3 two-dimensional silicon nanosheet. J. Phys. Chem. C 117, 16719–16724 (2013).
Vogt, P. et al. Silicene: compelling experimental evidence for graphene-like two-dimensional silicon. Phys. Rev. Lett. 108, 155501 (2012).
Li, X. et al. Intrinsic electrical transport properties of monolayer silicene and MoS2 from first principles. Phys. Rev. B: Condens. Matter 87, 115418 (2013).
Nikonov, D. E. & Young, I. A. Benchmarking of beyond CMOS exploratory devices for logic integrated circuits. IEEE J. Explor. Solid-State Computat. Devices Circuits 1, 3–11 (2015).
Li, M. O., Esseni, D., Nahas, J. J., Jena, D. & Xing, H. G. Two-dimensional heterojunction interlayer tunneling field effect transistors (Thin-TFETSs). IEEE J. Electron Devices Soc. 3, 200–207 (2015).
Theis, T. N. & Solomon, P. N. In quest of the next switch: prospects for greatly reduced power dissipation in a successor to the silicon field effect transistor. Proc. IEEE 98, 2005–2014 (2010).
Gnani, E., Maiorano, P., Reggiani, S., Gnudi, A. & Baccarani, G. Investigation on superlattice heterostructures for steep-slope nanowire FETs. Device Res. Conf. (DRC) 201–202 (IEEE, 2011).
Zhang, Q., Zhao, W. & Seabaugh, A. Low-threshold swing-tunnel transistors. IEEE Electron Device Lett. 27, 297–300 (2006).
Lu, H. & Seabaugh, A. Tunnel field-effect transistors: state-of-the-art. IEEE J. Electron Devices Soc. 2, 44–49 (2014).
Zhou, G. et al. Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V. IEEE Int. Electron Devices Meet. 32.6.1–32.6.4 (IEEE, 2012).
Lin, Y. C. et al. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures. Nat. Commun. 6, 7311 (2014).
Yan, R. et al. Esaki diodes in van der Waals heterojunctions with broken gap energy band alignment. Nano Lett. 15, 5791–5798 (2015).
Roy, T. et al. Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. ACS Nano 9, 2071–2079 (2015).
Sarkar, D. et al. A sub-thermionic tunnel field effect transistor with an atomically thin channel. Nature 526, 91–95 (2015).
M.C. acknowledges financial support from US National Science Foundation ECCS 1128335. D.J. would like to acknowledge financial support from the STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and by the Office of Naval Research (ONR), the Air Force Office of Scientific Research (AFOSR), and the National Science Foundation (NSF).
The authors declare no competing interests.
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Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat Rev Mater 1, 16052 (2016). https://doi.org/10.1038/natrevmats.2016.52
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