Figure 7 | Microsystems & Nanoengineering

Figure 7

From: Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide

Figure 7

Charge memory characteristics of the FETs made from MoS2 flakes: (a) and (b) show the HRTEM images of the cleaved surfaces of one MoS2 flake of critical thickness (or critical aspect ratio) and the other flake, which is thicker than the critical thickness, respectively; (c) schematic illustration of a back-gated MoS2 FET; (d and e) show the optical micrographs of the FETs made from the MoS2 flakes shown in (a and b), respectively; (f and g) display I DSV G curves measured from these two FETs, respectively; (h and i) display the I DSt curves measured from the FETs made from the MoS2 flakes shown in (a and b), respectively, which are modulated by a set of periodic −50 V, 100 ms V G pulses.

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