Figure 4 | Microsystems & Nanoengineering

Figure 4

From: Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide

Figure 4

SEM images of representative bad quality MoS2 nano- and microstructures with feature aspect ratios (feature thickness/lateral size ratios) smaller than the critical aspect ratios, which results in major defects in the exfoliated structures: (a) 8 nm half-pitch, 0.6 nm-thick line-spacing patterns, (b) 100 nm half-pitch, 2 nm-thick line-spacing patterns, (c) hundreds of nm size, 3.5 nm-thick flakes, (d) 5 μm size, 8 nm-thick flakes, (e) 10 μm size, 20 nm-thick lines, (f) 20 μm size, 33 nm-thick flakes, (g) 50 μm wide, 70 nm-thick (average thickness) film.

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