Figure 4

From: Soft electrostatic trapping in nanofluidics

Figure 4

Influence of lateral trap dimensions and particle net charges on the lateral trap stiffness for devices with a channel height of hc=160 and a pocket depth of hp=100 nm (device geometry G2). (a) Lateral position plots of a d=60 nm Au NP trapped by a wp=250 nm (dark green) and a wp=500 nm (light green) circular pocket and a d=100 nm (blue) Au NP trapped by wp=250 nm circular pocket. (b) MSD plots corresponding to the lateral position plots in (a). The error bars denote the s.e.m. values.