Table 1 Device structures and parameters

From: Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

Sample A B C
Emitter contact 300-nm GaN 5E19 cm−3 300-nm GaN 5E19 cm−3 300-nm GaN 5E19 cm−3
Emitter spacer 12-nm UID GaN Digital AlGaN alloy (2.5-Å AlN alternating with 10-Å GaN) 12-nm UID GaN
Barriers 2-nm UID AlN 2-nm UID AlN 2-nm UID AlN
Quantum well 3-nm UID GaN 3-nm UID GaN 3.5-nm UID GaN
Collector spacer 6-nm UID GaN 6-nm UID GaN 6-nm UID GaN
Collector contact 100-nm GaN 8E19 cm−3 100-nm GaN 8E19 cm−3 100-nm GaN 8E19 cm−3