Figure 5 | Light: Science & Applications

Figure 5

From: Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

Figure 5

Band diagram of the GaN/AlN heterostructure generated using a NEGF simulation. The holes are generated in the Zener region and subsequently tunnel through the RTD region into the emitter spacer where they recombine. The lack of observable emission from transitions between the bound conduction and valence band states within the quantum well is attributed to the quantum-confined Stark effect, resulting in a small wave function overlap.

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