Figure 4 | Light: Science & Applications

Figure 4

From: Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

Figure 4

(a) Experimental set-up used to measure the emitted power at various angles θ from the polar axis and into a solid-angle Ωp defined by the silicon photodiode area and range r from the GaN unipolar-doped light emitter. (b) Photocurrent vs elevational angle for Sample B obtained with the set-up in a. The data points are shown as solid circles, and the cubic-polynomial curve-fit is shown as a dashed line.

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