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Figure 1

From: Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

Figure 1

(a) Illustration of the baseline device growth stack (Sample A). (b) HAADF-STEM image of similarly grown test structure. (c) Isometric drawing of the device prior to oxide and pad metal depositions. (d) Top–down image of the Ti/Au pad contact. (e) Photograph of 7 × 10 μm2 GaN RTD structure showing the three DC-coupled electrodes and the RTD mesa device under test (DUT). Strong violet light was observed emitting from the RTD structures under bias, but this was identified as the long-wavelength tail of a much stronger near-UV emission at approximately 360 nm.

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