Multilayer 2D insulator shows promise for post-silicon electronics

Choi, Soo Ho; Kim, Soo Min

doi:10.1038/d41586-022-01476-7

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01 June 2022

Multilayer 2D insulator shows promise for post-silicon electronics

A method has been developed for fabricating thin films of the 2D insulator hexagonal boron nitride with a uniform crystal orientation. The advance makes this material a key contender for replacing silica substrates in future electronics.

Soo Ho Choi ⁰ &
Soo Min Kim ¹

Soo Ho Choi
1. Soo Ho Choi is in the Center for Integrated Nanostructure Physics and the Institute for Basic Science, Sungkyunkwan University, Suwon 16419, South Korea.
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Soo Min Kim
1. Soo Min Kim is in the Department of Chemistry, Sookmyung Women’s University, Seoul 14072, South Korea.
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As the electronics industry looks beyond silicon as its material of choice, many 2D materials are being investigated as candidates for the next generation of transparent and stretchable devices¹^,². The electrical insulator hexagonal boron nitride is a popular choice as a substrate for transistors in these devices, because thin films of the material are transparent and stable — both mechanically and chemically. But obtaining 2D hexagonal boron nitride samples that have a uniform crystal-lattice structure (in other words, a single crystal) is challenging. And building them into multilayered structures that are compatible with common industry practices is even more difficult. Writing in Nature, Ma et al.³ report the synthesis of five stacked layers of single-crystal hexagonal boron nitride using a technique called chemical-vapour deposition.

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Nature 606, 37-38 (2022)

doi: https://doi.org/10.1038/d41586-022-01476-7

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