Figure 3 | NPG Asia Materials

Figure 3

From: Catalyst-free growth of InAs/InxGa1−xAs coaxial nanorod heterostructures on graphene layers using molecular beam epitaxy

Figure 3

Microstructure of InAs/InxGa1−xAs coaxial nanorod heterostructures on CVD graphene layers. (a) Schematic diagram of the TEM sampling positions and the corresponding plan-view (b) bright-field-TEM, (c) HR-TEM and (d) Fourier-filtered images of InAs/InxGa1−xAs coaxial nanorod heterostructures. The inset diffraction patterns in b are obtained via FFT of the HR-TEM images in c. The areas of oxide layer formed on the nanorod surface and Pt-protection layer are marked in d. Cross-sectional (e) HR-TEM and (f) Fourier-filtered images of the interface between InAs and CVD graphene layers. The inset diffraction patterns in e were obtained via FFT of the corresponding HR-TEM image. The locations of misfit dislocations estimated by Fourier-filtered images are indicated by T.

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