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Electronics

Inside story of ferroelectric memories

Nature volume 483, pages 279–280 (2012)Cite this article

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The drive to improve digital memory through ever-shrinking electronic circuitry will ultimately face a bottleneck. Researchers propose exploiting the room 'inside' memory elements as a solution.

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Figure 1: Binary and multilevel data storage.

References

  1. Hilbert, M. & López, P. Science 332, 60–65 (2011).

    Article  ADS  CAS  Google Scholar 

  2. http://faostat.fao.org

  3. Lee, D. et al. Adv. Mater. 24, 402–406 (2012).

    Article  CAS  Google Scholar 

  4. Goldman, M. & Pangal, K. 3rd IEEE Int. Memory Workshop http://dx.doi.org/10.1109/IMW.2011.5873197 (2011).

  5. Fujisaki, Y. Jpn. J. Appl. Phys. 49, 100001-1–100001-14 (2010).

    Article  ADS  Google Scholar 

  6. Shiga, H. et al. IEEE J. Solid-state Circuits 45, 142–152 (2010).

    Article  ADS  Google Scholar 

  7. Das, S. & Appenzeller, J. Nano Lett. 11, 4003–4007 (2011).

    Article  ADS  CAS  Google Scholar 

  8. Chanthbouala, A. et al. Nature Nanotechnol. 7, 101–104 (2011).

    Article  ADS  Google Scholar 

  9. Choi, T., Lee, S., Choi, Y. J., Kiryukhin, V. & Cheong, S.-W. Science 324, 63–66 (2009).

    Article  ADS  CAS  Google Scholar 

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Authors and Affiliations

  1. Vincent Garcia and Manuel Bibes are at Unité Mixte de Physique CNRS/Thales, Campus de l'Ecole Polytechnique, Palaiseau 91767, France.,

    Vincent Garcia & Manuel Bibes

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  1. Vincent Garcia
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  2. Manuel Bibes
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Correspondence to Vincent Garcia or Manuel Bibes.

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Garcia, V., Bibes, M. Inside story of ferroelectric memories. Nature 483, 279–280 (2012). https://doi.org/10.1038/483279a

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