For decades, silicon has been the dominant material for conventional, charge-based electronics. A new twist makes silicon ripe to enter the domain of spintronics, where the new currency is electron spin.
This is a preview of subscription content, access via your institution
Relevant articles
Open Access articles citing this article.
-
Improvement of interface structure and magnetic properties of Co on Si (100) by surfactant (Sb) mediated growth
Applied Physics A Open Access 29 May 2009
-
Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering
Applied Physics A Open Access 06 March 2008
Access options
Subscribe to this journal
Receive 51 print issues and online access
$199.00 per year
only $3.90 per issue
Buy this article
- Purchase on SpringerLink
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
References
Appelbaum, I., Huang, B. & Monsma, D. J. Nature 447, 295–298 (2007).
Žutic´, I., Fabian, J. & Das Sarma, S. Rev. Mod. Phys. 76, 323–410 (2004).
Maekawa, S. & Shinjo, T. (eds) Spin Dependent Transport in Magnetic Nanostructures (Taylor & Francis, New York, 2002).
Žutic´, I., Fabian, J. & Erwin S. C. Phys. Rev. Lett. 97, 026602 (2006).
Sugahara, S. IEE Proc. Circuit Devices Syst. 152, 355–365 (2005).
Tyryshkin, A. M., Lyon, S. A., Jantsch, W. & Schäffler, F. Phys. Rev. Lett. 94, 126802 (2005).
Das Sarma, S., de Sousa, R., Hu, X. & Koiller, B. Solid State Commun. 133, 737–746 (2005).
Lampel, G. Phys. Rev. Lett. 20, 491–493 (1968).
Parkin, S. S. P. et al. Proc. IEEE 91, 661–680 (2003).
Johnson, M. & Silsbee, R. H. Phys. Rev. Lett. 55, 1790–1793 (1985).
Hanbicki, A. T. et al. Appl. Phys. Lett. 80, 1240–1242 (2002).
Jiang, X. et al. Phys. Rev. Lett. 94, 056601 (2005).
Min, B.-C., Motohashi, K., Lodder, C. & Jansen, R. Nature Mater. 5, 817–822 (2006).
Žutic´, I. Nature Mater. 5, 771–772 (2006).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Žutić, I., Fabian, J. Silicon twists. Nature 447, 269–270 (2007). https://doi.org/10.1038/447269a
Published:
Issue Date:
DOI: https://doi.org/10.1038/447269a
This article is cited by
-
Theoretical studies on the effects of pressure, temperature, and aluminum concentration on the optical absorption, refractive index and group velocity within GaAs/Ga1−xAlxAs quantum ring in the presence of Rashba spin–orbit interaction
Optical and Quantum Electronics (2024)
-
Pressure effect on spin–orbit interaction in a spherical quantum antidot
Indian Journal of Physics (2013)
-
Spin Transistors vs. Conventional Transistors: What Are the Benefits?
Journal of Superconductivity and Novel Magnetism (2010)
-
Improvement of interface structure and magnetic properties of Co on Si (100) by surfactant (Sb) mediated growth
Applied Physics A (2009)
-
Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering
Applied Physics A (2008)