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Materials science

Silicon carbide in contention

Nature volume 430, pages 974–975 (2004)Cite this article

Silicon carbide is a highly desirable material for high-power electronic devices — more desirable even than silicon. And now the problem of producing large, pure wafers of the carbide could be solved.

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Figure 1: The structure of silicon carbide.
Figure 2: The repeated a-face growth process.

References

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  1. CNRS, is in the Department of Physics, Institut National Polytechnique de Grenoble, Grenoble, 38402, France

    Roland Madar

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  1. Roland Madar
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Madar, R. Silicon carbide in contention. Nature 430, 974–975 (2004). https://doi.org/10.1038/430974a

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