Hydrogen ions, both positive and negative, have a pervasive influence on the properties of materials and solutions. A unified picture of the behaviour of these ions has now been drawn.
This is a preview of subscription content, access via your institution
Access options
Subscribe to this journal
Receive 51 print issues and online access
$199.00 per year
only $3.90 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
References
Van de Walle, C. G. & Neugebauer, J. Nature 423, 626–628 (2003).
Marx, D., Tuckerman, M. E., Hutter, J. & Parrinello, M. Nature 397, 601–604 (1999).
Tuckerman, M. E., Marx, D. & Parrinello, M. Nature 417, 925–929 (2002).
Pankove, J. I. & Johnson, N. M. (eds) Semiconductors and Semimetals Vol. 34, Hydrogen in Semiconductors (Academic, Boston, 1991).
Van de Walle, C. G. & Martin, R. M. Phys. Rev. B 34, 5621–5634 (1986).
Franciosi, A. & Van de Walle, C. G. Surf. Sci. Rep. 25, 1–140 (1996).
Caldas, M. J., Fazzio, A. & Zunger, A. Appl. Phys. Lett. 45, 671–673 (1984).
Tersoff, J. & Harrison, W. A. Phys. Rev. Lett. 58, 2367–2370 (1987).
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Martin, R., Galli, G. Hydrogen falls into line. Nature 423, 595–596 (2003). https://doi.org/10.1038/423595a
Issue Date:
DOI: https://doi.org/10.1038/423595a
