Abstract
INWARDLY rectifying K+ channels (IRKs) conduct current preferentially in the inward direction. This inward rectification has two components: voltage-dependent blockade by intracellular Mg2+(Mgi2+)l–7 and intrinsic gating8,9. Two members of this channel family, IRK1 (ref. 10) and ROMK1 (ref. 11), differ markedly in affinity for Mgi2+(ref. 12). We found that IRK1 and ROMK1 differ in voltage-dependent gating and searched for the gating structure by large-scale and site-directed mutagenesis. We found that a single amino-acid change within the putative transmembrane domain M2, aspartate (D) in IRK1 to the corresponding asparagine (N) in ROMK1, controls the gating phenotype. Mutation D172N in IRK1 produced ROMKl-like gating whereas the reverse mutation in ROMK1—N17ID—produced IRKl-like gating. Thus, a single negatively charged residue seems to be a crucial determinant of gating.
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Wible, B., Taglialatela, M., Ficker, E. et al. Gating of inwardly rectifying K+ channels localized to a single negatively charged residue. Nature 371, 246–249 (1994). https://doi.org/10.1038/371246a0
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DOI: https://doi.org/10.1038/371246a0
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