Nanostructure

Epitaxial diamond polytypes on silicon

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Abstract

Carbon is unique in the variety of configurations it can adopt with itself and other elements. Here we show how ion beams can be used to nanostructure various diamond polytypes, epitaxially aligning them to a silicon substrate. The ready controllability of ion beams, which are already used to manufacture submicrometre-scale devices, means that our findings should enable new carbon and non-carbon materials to be nanostructured for a host of applications.

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Figure 1: High-resolution transmission electron microscopy (Philips CM200) cross-sectional images of diamond polytypes.

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Correspondence to S. T. Lee.

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