addendum: Magnetoresistance from quantum interference effects in ferromagnets

Article metrics

Nature 404, 581— 584 (2000).

Our attention has been drawn to an earlier report1 on the zero-field resistivity of ferrimagnetic amorphous films containing mixtures of gadolinium with cobalt and iron. This paper mentions the possible relevance of electron–electron interactions to the low-temperature properties of such films, and displays the Al'tshuler–Aronov equation2 for the zero-field temperature dependence of the resistivity of a disordered conductor. To understand the magnetoresistance data in our Letter, which deals with a crystalline semiconductor that undergoes a transition from insulating paramagnet to metallic magnet, a useful theoretical guidance comes from the earlier paper of Millis and Lee3, which contains explicit formulae for the field-dependent resistance.

References

  1. 1

    Kopelevich, Ya. V., Makarov, V. V. & Sapozhnikova, L. M. Electrical conductivity of amorphous ferrimagnetic metals. Fiz. Tverd. Tela 28, 3674– 3679 (1986) and Sov. Phys. Solid State 28, 2069–2072 (1986).

  2. 2

    Al'tshuler, B. L., Aronov, A. G., Gershenson, M. E. & Sharvin, Yu. V. Quantum effects in disordered metal films. Sov. Sci. A Phys. 9, 223–354 (1987).

  3. 3

    Millis, A. J. & Lee, P. A. Spin-orbit and paramagnon effects on magnetoconductance and tunneling. Phys. Rev. B 30 , 6170–6173 (1984) and 31, 5523–5524(E) ( 1985).

Download references

Rights and permissions

Reprints and Permissions

About this article

Further reading

Comments

By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.