addendum: Magnetoresistance from quantum interference effects in ferromagnets

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Nature 404, 581— 584 (2000).

Our attention has been drawn to an earlier report1 on the zero-field resistivity of ferrimagnetic amorphous films containing mixtures of gadolinium with cobalt and iron. This paper mentions the possible relevance of electron–electron interactions to the low-temperature properties of such films, and displays the Al'tshuler–Aronov equation2 for the zero-field temperature dependence of the resistivity of a disordered conductor. To understand the magnetoresistance data in our Letter, which deals with a crystalline semiconductor that undergoes a transition from insulating paramagnet to metallic magnet, a useful theoretical guidance comes from the earlier paper of Millis and Lee3, which contains explicit formulae for the field-dependent resistance.


  1. 1

    Kopelevich, Ya. V., Makarov, V. V. & Sapozhnikova, L. M. Electrical conductivity of amorphous ferrimagnetic metals. Fiz. Tverd. Tela 28, 3674– 3679 (1986) and Sov. Phys. Solid State 28, 2069–2072 (1986).

  2. 2

    Al'tshuler, B. L., Aronov, A. G., Gershenson, M. E. & Sharvin, Yu. V. Quantum effects in disordered metal films. Sov. Sci. A Phys. 9, 223–354 (1987).

  3. 3

    Millis, A. J. & Lee, P. A. Spin-orbit and paramagnon effects on magnetoconductance and tunneling. Phys. Rev. B 30 , 6170–6173 (1984) and 31, 5523–5524(E) ( 1985).

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