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Molecular transistors

Potential modulations along carbon nanotubes

Abstract

True molecular-scale transistors have been realized using semiconducting carbon nanotubes1,2,3,4,5, but no direct measurements of the underlying electronic structure of these have been made. Here we use a new scanning-probe technique to investigate the potential profile of these devices. Surprisingly, we find that the potential does not vary in a smooth, monotonic way, but instead shows marked modulations with a typical period of about 40 nm. Our results have direct relevance for modelling this promising class of molecular devices.

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Figure 1: Scanning-gate potential imaging (SGPI) along a semiconducting carbon nanotube.

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Correspondence to Cees Dekker.

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Tans, S., Dekker, C. Potential modulations along carbon nanotubes. Nature 404, 834–835 (2000). https://doi.org/10.1038/35009026

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