Abstract
Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.
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Sinclair, R., Ponce, F., Yamashita, T. et al. Dynamic observation of defect annealing in CdTe at lattice resolution. Nature 298, 127–131 (1982). https://doi.org/10.1038/298127a0
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DOI: https://doi.org/10.1038/298127a0
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