Letter | Published:

Growth of Single Crystals of Lead Sulphide in Silica Gels near Ambient Temperatures

Naturevolume 212pages392393 (1966) | Download Citation



THE application of intermetallic compounds in electronic devices has been limited by the difficulties of preparing single crystal materials with desirable properties1. Typical techniques used involve growth from the melt at high temperatures and, frequently, high pressures, or by chemical transport. We wish to report an alternative method—the growth of single crystals of lead sulphide in silica gels near ambient temperatures. This shares the various advantages usually associated with low temperature techniques.

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  1. 1

    Kern, E. L., and Earlywine, E., Semiconductor Products and Solid State Technology (1965).

  2. 2

    Henisch, H. K., Dennis, J., and Hanoka, J. I., J. Phys. Chem. Solids, 26, 493 (1965).

  3. 3

    Swift, E. H., and Butler, E. A., Analyt. Chem., 28, 146 (1956).

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  1. Research Division, School of Engineering and Science, New York University, University Heights, New York

    • , ZVI BLANK
    •  & Y. OKAMOTO


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