Letter | Published:

Growth of Single Crystals of Lead Sulphide in Silica Gels near Ambient Temperatures

Nature volume 212, pages 392393 (22 October 1966) | Download Citation

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Abstract

THE application of intermetallic compounds in electronic devices has been limited by the difficulties of preparing single crystal materials with desirable properties1. Typical techniques used involve growth from the melt at high temperatures and, frequently, high pressures, or by chemical transport. We wish to report an alternative method—the growth of single crystals of lead sulphide in silica gels near ambient temperatures. This shares the various advantages usually associated with low temperature techniques.

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References

  1. 1.

    , and , Semiconductor Products and Solid State Technology (1965).

  2. 2.

    , , and , J. Phys. Chem. Solids, 26, 493 (1965).

  3. 3.

    , and , Analyt. Chem., 28, 146 (1956).

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Author information

Affiliations

  1. Research Division, School of Engineering and Science, New York University, University Heights, New York.

    • WALTER BRENNER
    • , ZVI BLANK
    •  & Y. OKAMOTO

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DOI

https://doi.org/10.1038/212392b0

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