Abstract
THE formation of Kish graphite in iron/carbon is well known1, and reports have appeared of the growth of usable single crystals of graphite at 3,200° C in these systems2. Such crystals have not had the benefit of formation at a high temperature, so that in order to produce long-range order they must be annealed. Accordingly, attempts have been made to crystallize graphite from higher melting solvents such as refractory carbides. No graphite was formed when tungsten monocarbide (m.p. 2,785° C) was used as the solvent, but an abundance of large single crystals of graphite was obtained from tantalum monocarbide (m.p. ∼ 3,820° C).
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References
Ubbelohde, A. R., and Lewis, F. A., Graphite and its Crystal Compounds (Oxford University Press, 1960).
Soule, D. E., I. B. M. J. Res. Dev., 8, 273 (1964).
Moore, A. W., Ubbelohde, A. R., and Young, D. A., Brit. J. App. Phys., 13, 393 (1962).
Storms, E. K., A Critical View of Refractories, LA-2942 (Office of Technical Services, U.S. Department of Commerce, 1964).
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TULLOCH, H., YOUNG, D. Synthetic Single Crystals of Graphite. Nature 211, 730–731 (1966). https://doi.org/10.1038/211730b0
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DOI: https://doi.org/10.1038/211730b0
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