Letter | Published:

Preparation of Aluminium Arsenide by a Vapour Phase Transport Reaction

Nature volume 199, page 1287 (28 September 1963) | Download Citation

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Abstract

LITTLE work has been reported on the preparation of the semi-conducting compound aluminium arsenide, mainly because of the practical difficulties involved. Preparation from the melt is difficult because of the high melting point of the compound (about 1,700° C) and of the extreme reactivity of aluminium at this temperature. A few workers have prepared small crystals from the melt, and Stambaugh has produced polycrystalline ingots. This work is reviewed in ref. 1. The best of this material has an impurity carrier density of the order of 1019/cm3 and is p-type.

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References

  1. 1.

    Willardson, R., and Goering, H. (eds.), Compound Semiconductors, 1, 184 (Reinhold Pub. Corp., New York, 1962).

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Affiliations

  1. Standard Telecommunication Laboratories, Ltd., Harlow, Essex.

    • D. E. BOLGER
    •  & B. E. BARRY

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DOI

https://doi.org/10.1038/1991287a0

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