Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

Radiative Recombination in Gallium Phosphide Point-Contact Diodes

Abstract

CAREFUL observation of the radiation emitted from point-contact gallium phosphide diodes under conditions of reverse bias has shown that the luminescence is associated with the recombination of carriers in the breakdown region of the current-voltage characteristic. Electroluminescent radiation has been observed in gallium phosphide by several workers1–5. The electroluminescence appears to be associated with p–n junctions formed between the p-type bulk and an n-type skin on the surface of the material and at grain boundaries. From measurements of optical absorption in gallium phosphide, a value for the energy gap at room temperature of 2.19 eV. was deduced. This value is in good agreement with the value of 2.20 eV. for the room temperature band gap measured at Bell Telephone Laboratory6.

Access options

Rent or Buy article

Get time limited or full article access on ReadCube.

from$8.99

All prices are NET prices.

References

  1. 1

    Wolff, G. A., Hebert, R. A., and Brodev, J. P., Phys. Rev., 100, 1144 (1955).

    ADS  CAS  Article  Google Scholar 

  2. 2

    Loebner, E. E., and Poor, jun., E. W., Phys. Rev. Letters, 3, 23 (1959).

    ADS  CAS  Article  Google Scholar 

  3. 3

    Holf, D. A., Alfray, G. F., and Wiggins, C. S., Nature, 181, 109 (1958).

    ADS  Google Scholar 

  4. 4

    Mandelkorn, J., Proc. Inst. Rad. Eng., 47, No. 11, 2012 (November 1959).

    Google Scholar 

  5. 5

    Mandelkorn, J., “Gallium Phosphide High Temperature High Frequency Point-Contact Diodes”, Electronics Components Conference, Washington, D.C., May 10, 1960.

    Google Scholar 

  6. 6

    Spitzer, W. G., Gershenzon, M., Frosch, C. J., and Gibbs, D. F., J. Phys. Chem. Solids, 11, 3/4, 339 (1959).

    ADS  CAS  Article  Google Scholar 

  7. 7

    Chynoweth, A. G., and Pearson, G. L., J. App. Phys., 29, 7, 1103 (1958).

    Google Scholar 

  8. 8

    Goetzberger, A., and Shockley, W., Bull., Amer. Phys. Soc., Series II, 4, 409 (1959).

    Google Scholar 

  9. 9

    Shockley, W., Electrical Engineering Seminar, Ohio State University, March 2, 1960.

Download references

Author information

Affiliations

Authors

Rights and permissions

Reprints and Permissions

About this article

Cite this article

GORTON, H., SWARTZ, J. & PEET, C. Radiative Recombination in Gallium Phosphide Point-Contact Diodes. Nature 188, 303–304 (1960). https://doi.org/10.1038/188303b0

Download citation

Further reading

Comments

By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.

Search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing