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Radiative Recombination in Gallium Phosphide Point-Contact Diodes


CAREFUL observation of the radiation emitted from point-contact gallium phosphide diodes under conditions of reverse bias has shown that the luminescence is associated with the recombination of carriers in the breakdown region of the current-voltage characteristic. Electroluminescent radiation has been observed in gallium phosphide by several workers1–5. The electroluminescence appears to be associated with p–n junctions formed between the p-type bulk and an n-type skin on the surface of the material and at grain boundaries. From measurements of optical absorption in gallium phosphide, a value for the energy gap at room temperature of 2.19 eV. was deduced. This value is in good agreement with the value of 2.20 eV. for the room temperature band gap measured at Bell Telephone Laboratory6.

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GORTON, H., SWARTZ, J. & PEET, C. Radiative Recombination in Gallium Phosphide Point-Contact Diodes. Nature 188, 303–304 (1960).

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