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Letters to Nature
Nature 426, 166-169 (13 November 2003) | doi:10.1038/nature02070; Received 15 April 2003; Accepted 12 September 2003
A polymer/semiconductor write-once read-many-times memory
Sven Möller1, Craig Perlov2, Warren Jackson2, Carl Taussig2 & Stephen R. Forrest1
- Department of Electrical Engineering and Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, New Jersey 08544, USA
- Hewlett-Packard Laboratories, Palo Alto, California 94304, USA
Correspondence to: Stephen R. Forrest1 Email: forrest@princeton.edu
Abstract
Organic devices promise to revolutionize the extent of, and access to, electronics by providing extremely inexpensive, lightweight and capable ubiquitous components that are printed onto plastic, glass or metal foils1, 2, 3. One key component of an electronic circuit that has thus far received surprisingly little attention is an organic electronic memory. Here we report an architecture for a write-once read-many-times (WORM) memory, based on the hybrid integration of an electrochromic polymer with a thin-film silicon diode deposited onto a flexible metal foil substrate. WORM memories are desirable for ultralow-cost permanent storage of digital images, eliminating the need for slow, bulky and expensive mechanical drives used in conventional magnetic and optical memories. Our results indicate that the hybrid organic/inorganic memory device is a reliable means for achieving rapid, large-scale archival data storage. The WORM memory pixel exploits a mechanism of current-controlled, thermally activated un-doping of a two-component electrochromic conducting polymer.
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