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Latest Research and Reviews

  • Research | | open

    Though designing conductive polymers for memory devices is attractive for future low-cost flexible electronics, a proof-of-concept device has yet to be realized. Here, the authors report a redox-gated polymer memristive processing unit with programmable multilevel storage and logic functionalities.

    • Bin Zhang
    • , Fei Fan
    • , Wuhong Xue
    • , Gang Liu
    • , Yubin Fu
    • , Xiaodong Zhuang
    • , Xiao-Hong Xu
    • , Junwei Gu
    • , Run-Wei Li
    •  & Yu Chen
  • Research | | open

    Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field.

    • Aitian Chen
    • , Yan Wen
    • , Bin Fang
    • , Yuelei Zhao
    • , Qiang Zhang
    • , Yuansi Chang
    • , Peisen Li
    • , Hao Wu
    • , Haoliang Huang
    • , Yalin Lu
    • , Zhongming Zeng
    • , Jianwang Cai
    • , Xiufeng Han
    • , Tom Wu
    • , Xi-Xiang Zhang
    •  & Yonggang Zhao
  • Research | | open

    Voltage control of spin-orbit torques (SOTs) provides additional degrees of freedom for spinmemory and -logic applications. Here the authors demonstrate a large voltage control of direction as well as amount of current-induced spin accumulation at the heavy metal/ferromagnet interface and effectively tune the SOTs in a Pt/Co/GdOx heterostructure.

    • Rahul Mishra
    • , Farzad Mahfouzi
    • , Dushyant Kumar
    • , Kaiming Cai
    • , Mengji Chen
    • , Xuepeng Qiu
    • , Nicholas Kioussis
    •  & Hyunsoo Yang
  • Research | | open

    Spin-orbit torque (SOT) induced magnetization switching facilitates all electric multi-state spin memories and spin logic devices. Here the authors show a new SOT field-free switching mode where the perpendicular layer with tilted easy axis is coupled to an in-plane layer with a uniaxial easy axis.

    • W. J. Kong
    • , C. H. Wan
    • , X. Wang
    • , B. S. Tao
    • , L. Huang
    • , C. Fang
    • , C. Y. Guo
    • , Y. Guang
    • , M. Irfan
    •  & X. F. Han
  • Research |

    An antiferromagnetic memory with piezoelectric strain control can be operated in high magnetic fields and combines a small device footprint with low switching power.

    • Han Yan
    • , Zexin Feng
    • , Shunli Shang
    • , Xiaoning Wang
    • , Zexiang Hu
    • , Jinhua Wang
    • , Zengwei Zhu
    • , Hui Wang
    • , Zuhuang Chen
    • , Hui Hua
    • , Wenkuo Lu
    • , Jingmin Wang
    • , Peixin Qin
    • , Huixin Guo
    • , Xiaorong Zhou
    • , Zhaoguogang Leng
    • , Zikui Liu
    • , Chengbao Jiang
    • , Michael Coey
    •  & Zhiqi Liu
    Nature Nanotechnology 14, 131-136
  • Reviews |

    Chalcogenide phase-change materials (PCMs) are leading candidates for non-volatile memory and neuro-inspired computing devices. This Review focuses on the crystallization mechanisms of PCMs as well as the design principles to achieve PCMs with high switching speeds and good data retention, which will aid the development of PCM-based universal memory and neuro-inspired devices.

    • Wei Zhang
    • , Riccardo Mazzarello
    • , Matthias Wuttig
    •  & Evan Ma

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