Information storage

Latest Research and Reviews

  • Research | | open

    Low dimensional multiferroic materials promise the technological advances in next generation spintronic and microwave magnetoelectric devices. Here the authors propose the multiferroicity in the atomically thin ferromagnetic Cr2Ge2Te6/ferroelectric In2Se3 van der Waals heterostructure due to the crosslayer magnetoelectric coupling.

    • Cheng Gong
    • , Eun Mi Kim
    • , Yuan Wang
    • , Geunsik Lee
    •  & Xiang Zhang
  • Research | | open

    The depolarization dynamics in ferroelectric materials is important for applications as it governs data loss. Here, the authors find a universal constant in ferroelectric materials that gives the boundary between a depolarizing and thermodynamically stable regime.

    • Dong Zhao
    • , Thomas Lenz
    • , Gerwin H. Gelinck
    • , Pim Groen
    • , Dragan Damjanovic
    • , Dago M. de Leeuw
    •  & Ilias Katsouras
  • Research |

    The topological Hall effect is observed at above room temperature in a bilayer heterostructure composed of thulium iron garnet and platinum, suggesting the formation of skyrmions in a magnetic insulator through the interfacial Dzyaloshinskii–Moriya interaction.

    • Qiming Shao
    • , Yawen Liu
    • , Guoqiang Yu
    • , Se Kwon Kim
    • , Xiaoyu Che
    • , Chi Tang
    • , Qing Lin He
    • , Yaroslav Tserkovnyak
    • , Jing Shi
    •  & Kang L. Wang
    Nature Electronics 2, 182-186
  • Reviews |

    Throughout evolution, DNA has been the primary medium of biological information storage. In this article, Ceze, Nivala and Strauss discuss how DNA can be adopted as a storage medium for custom data, as a potential future complement to current data storage media such as computer hard disks, optical disks and tape. They discuss strategies for coding, decoding and error correction and give examples of implementation both in vitro and in vivo.

    • Luis Ceze
    • , Jeff Nivala
    •  & Karin Strauss
  • Research | | open

    Designing multi-value logic transistors with stable and reliable intermediate states remains a challenge. Here, the authors report the mobility edge quantization phenomenon via resonant hybridization of ZnO QDs embedded in amorphous ZnO domains to enable adjustable multi-value intermediate states.

    • Lynn Lee
    • , Jeongwoon Hwang
    • , Jin Won Jung
    • , Jongchan Kim
    • , Ho-In Lee
    • , Sunwoo Heo
    • , Minho Yoon
    • , Sungju Choi
    • , Nguyen Van Long
    • , Jinseon Park
    • , Jae Won Jeong
    • , Jiyoung Kim
    • , Kyung Rok Kim
    • , Dae Hwan Kim
    • , Seongil Im
    • , Byoung Hun Lee
    • , Kyeongjae Cho
    •  & Myung Mo Sung

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