Table 1
From the following article
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
G. P. Lansbergen, R. Rahman, C. J. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg & S. Rogge
Nature Physics 4, 656 - 661 (2008) Published online: 15 June 2008
doi:10.1038/nphys994
Table 1. First three measured excited states of each sample versus the best fit to a tight-binding (TB) model (NEMO 3D). The donor depths (under the Si–SiO2 interface) that were obtained from the measured charging energy versus the distance obtained from the tight-binding fit are also given. The right-most column of the table lists the tight-binding predictions for the local electric field and the standard deviation of the fit s. The experimental error per level across all devices is approximately 0.5 meV.
| Device | E1 | E2 | E3 | EC | d | F | s | |
|---|---|---|---|---|---|---|---|---|
| (meV) | (meV) | (meV) | (meV) | (nm) | (MV m-1) | (meV) | ||
| 10G16 | Exp. | 2 | 15 | 23 | 30 | 3.3 | ||
| TB | 2.2 | 15.6 | 23.0 | 3.3 | 37.3 | 0.59 | ||
| 11G14 | Exp. | 4.5 | 13.5 | 25 | 29 | 3.2 | ||
| TB | 4.5 | 13.5 | 25.0 | 3.5 | 31.6 | 0.04 | ||
| 13G14 | Exp. | 3.5 | 15.5 | 26.4 | 31 | 3.5 | ||
| TB | 3.6 | 15.7 | 26.3 | 3.2 | 35.4 | 0.17 | ||
| HSJ18 | Exp. | 5 | 10 | 21.5 | 33 | 4.0 | ||
| TB | 4.5 | 9.9 | 21.8 | 4.1 | 26.1 | 0.63 | ||
| GLG14 | Exp. | 1.3 | 10 | 13.2 | 35 | 4.7 | ||
| TB | 1.3 | 10 | 12.4 | 5.2 | 23.1 | 0.28 | ||
| GLJ17 | Exp. | 2 | 7.7 | 15.5 | 33 | 4.0 | ||
| TB | 1.3 | 7.7 | 15.8 | 4.9 | 21.9 | 0.77 |
