A more comprehensive understanding of coupled quantum systems could soon be in reach with a capacitance-based scanning probe technique that explores the behaviour and interaction of individual dopant atoms in a semiconductor.
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Quantum interference based Boolean gates in dangling bond loops on Si(100):H surfaces
Scientific Reports Open Access 15 September 2015
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References
Kane, B. E. Nature 393, 133–135 (1998).
Vrijen, R. et al. Phys. Rev. A 62, 012306 (2000).
Deshpande, M. R., Sleight, J. W., Reed, M. A., Wheeler, R. G. & Matyi, R. J. Phys. Rev. Lett. 76, 1328–1331 (1996).
Seiller, H. et al. Phys. Rev. Lett. 97, 206805 (2006).
Geim, A. K. et al. Phys. Rev. B 50, 8074–8077 (1994).
Kuljanishvili, L. et al. Nature Phys. 4, 227–233 (2008).
Kettle, L. M., Goan, H. S. & Smith, S. C. Phys. Rev. B 73, 115205 (2006).
Lieb, E. H. Phys. Rev. A 29, 3018–3028 (1984).
Schofield, S. R. et al. Phys. Rev. Lett. 91, 136104–136107 (2003)
Shen, T. C. et al. J. Vac. Sci. Technol. B 22, 3182–3185 (2004).
Ruess, F. J. et al. Small 3, 563–567 (2007).
The 2006 International Technology Roadmap for Semiconductors (ITRS, 2006); available at <http://www.itrs.net/Links/2006Update/2006UpdateFinal.htm>.
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Simmons, M. Probing dopants at the atomic level. Nature Phys 4, 165–166 (2008). https://doi.org/10.1038/nphys902
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DOI: https://doi.org/10.1038/nphys902
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Quantum interference based Boolean gates in dangling bond loops on Si(100):H surfaces
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