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Nature Physics 4, 165–166 (1 March 2008) | doi:10.1038/nphys902
Scanning probe spectroscopy: Probing dopants at the atomic level
Abstract
A revolution is occurring in semiconductor fabrication technologies, the ultimate goal of which is to develop devices based on manipulating the charge or spin of individual dopant atoms. Dopants are impurities deliberately added in low concentrations to a semiconductor to alter its electrical or optical properties.
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