Article abstract
Nature Physics 4, 803 - 809 (2008)
Published online: 10 August 2008 | doi:10.1038/nphys1036
Subject Category: Electronics, photonics and device physics
Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices
Alina M. Deac1,2, Akio Fukushima2, Hitoshi Kubota2, Hiroki Maehara1,2,3, Yoshishige Suzuki1,2, Shinji Yuasa2, Yoshinori Nagamine3, Koji Tsunekawa3, David D. Djayaprawira3 & Naoki Watanabe3
Abstract
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can induce steady-state magnetization precession, and has recently been proposed as a working principle for ubiquitous radio-frequency devices for radar and telecommunication applications. However, so far, the development of industrially attractive prototypes has been hampered by the inability to identify systems that can provide enough power. Here, we demonstrate that microwave signals with device-compatible output power levels can be generated from a single magnetic tunnel junction with a lateral size of 100 nm, seven orders of magnitude smaller than conventional radio-frequency oscillators. We find that in MgO magnetic tunnel junctions the perpendicular torque induced by the spin-polarized current on the local magnetization can reach 25% of the in-plane spin-torque term, although showing a different bias dependence. Both findings contrast with the results obtained on all-metallic structures, previously investigated, reflecting the fundamentally different transport mechanisms in the two types of structure.
- Osaka University, Graduate School of Engineering Science, Department of Materials Engineering Science, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
- National Institute of Advanced Industrial Science and Technology (AIST), Nanoelectronics Research Institute, 1-1-1 Umezono, Tsukuba 305-8568, Japan
- Canon ANELVA Corporation, Electron Device Division, 5-1-2 Kurigi, Asao, Kawasaki 215-8550, Japan
Correspondence to: Alina M. Deac1,2 e-mail: alina.deac@excite.com
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