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Optical memory

Phase-change memory

Nature Photonics volume 9, pages 712–714 (2015)Cite this article

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Integrated nano-optical memories may help overcome the limitations of communication speeds and energy costs in electronic chips. Now, using nanoscale phase-change materials researchers have realized the first multi-bit all-optical non-volatile memories with a very small footprint.

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Figure 1: Phase change between crystalline and amorphous states in a GST cell, corresponding to low and high transmission levels.
Figure 2: Eight-level operation of a single-cell device.

References

  1. Shacham, A. et al. IEEE Trans. Comput. 57, 1246–1260 (2008).

    Article  MathSciNet  Google Scholar 

  2. Nozaki, K. et al. Nature Photon. 6, 248–252 (2012).

    Article  ADS  Google Scholar 

  3. Kuramochi, E. et al. Nature Photon. 8, 474–481 (2014).

    Article  ADS  Google Scholar 

  4. Rios, C. et al. Nature Photon. 9, 725–732 10.1038/nphoton.2015.212(2015).

    Article  ADS  MathSciNet  Google Scholar 

  5. Wuttig, M. & Yamada, N. Nature Mater. 6, 824–832 (2007).

    Article  ADS  Google Scholar 

  6. Raoux, S., Xiong, F., Wuttig, M. & Pop, E. MRS Bull. 39, 703–710 (2014).

    Article  Google Scholar 

  7. Loke, D. et al. Science 336, 1566–1569 (2012).

    Article  ADS  Google Scholar 

  8. Yamada, N. & Matsunaga, T. J. Appl. Phy. 88, 7020–7028 (2000).

    Article  ADS  Google Scholar 

  9. Pernice, W. H. P. & Bhaskaran, H. Appl. Phys. Lett. 101, 171101 (2012).

    Article  ADS  Google Scholar 

  10. Tanaka, D. et al. Opt. Express 20, 10283–10294 (2012).

    Article  ADS  Google Scholar 

  11. Gholipour, B., Zhang, J., MacDonald, K. F., Hewak, D. W. & Zheludev, N. I. Adv. Mater. 25, 3050–3054 (2013).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Eiichi Kuramochi and Masaya Notomi are at the Nanophotonics Center and NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan,

    Eiichi Kuramochi & Masaya Notomi

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  1. Eiichi Kuramochi
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  2. Masaya Notomi
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Correspondence to Eiichi Kuramochi or Masaya Notomi.

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Kuramochi, E., Notomi, M. Phase-change memory. Nature Photon 9, 712–714 (2015). https://doi.org/10.1038/nphoton.2015.212

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