Abstract
A low operating energy is needed for nanocavity lasers designed for on-chip photonic network applications. On-chip nanocavity lasers must be driven by current because they act as light sources driven by electronic circuits. Here, we report the high-speed direct modulation of a lambda-scale embedded active region photonic-crystal (LEAP) laser that holds three records for any type of laser operated at room temperature: a low threshold current of 4.8 µA, a modulation current efficiency of 2.0 GHz µA−0.5 and an operating energy of 4.4 fJ bit−1. Five major technologies make this performance possible: a compact buried heterostructure, a photonic-crystal nanocavity, a lateral p–n junction realized by ion implantation and thermal diffusion, an InAlAs sacrificial layer and current-blocking trenches. We believe that an output power of 2.17 µW and an operating energy of 4.4 fJ bit−1 will enable us to realize on-chip photonic networks in combination with the recently developed highly sensitive receivers.
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Acknowledgements
The authors thank K. Ishibashi and Y. Shouji for fabricating the devices. Part of this work was supported by the New Energy and Industrial Technology Development Organization (NEDO).
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K.T. and S.M. performed the measurements and wrote the manuscript. K.T., A.S., K.N. and M.N. designed the devices. H.T. and T.K. carried out the numerical simulations. K.T., T.S., W.K., K.H. and S.M. fabricated the devices. S.M. led the project.
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Takeda, K., Sato, T., Shinya, A. et al. Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers. Nature Photon 7, 569–575 (2013). https://doi.org/10.1038/nphoton.2013.110
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DOI: https://doi.org/10.1038/nphoton.2013.110
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