Letter abstract


Nature Photonics 2, 551 - 554 (2008)
Published online: 27 July 2008 | doi:10.1038/nphoton.2008.135

Subject Category: Lasers, LEDs and light sources

A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

Harumasa Yoshida1, Yoji Yamashita1, Masakazu Kuwabara1 & Hirofumi Kan1


The realization of semiconductor laser diodes and light-emitting diodes that emit short-wavelength ultraviolet light is of considerable interest for a number of applications including chemical/biochemical analysis, high-density data storage and material processing. Group III nitride materials are one of the most promising candidates for fabricating such devices. Here we describe an AlGaN multiple-quantum-well laser diode that emits light at 342 nm, the shortest wavelength ever reported for an electrically driven laser diode. To fabricate the laser, a low-dislocation-density AlGaN layer with an AlN mole fraction of 0.3 was grown on a sapphire substrate using a hetero facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method1, 2, 3. An AlGaN multiple-quantum-well structure was then grown on the high-quality AlGaN layer. Lasing at a wavelength of 342.3 nm was observed under pulsed current mode at room temperature.

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  1. Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan

Correspondence to: Harumasa Yoshida1 e-mail: harumasa@crl.hpk.co.jp



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