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Ultraviolet light-emitting diodes based on group three nitrides

Nature Photonics volume 2, pages 77–84 (2008)Cite this article

Abstract

Light-emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. For devices operating at shorter wavelengths, alloy compositions with a greater aluminium content are required. The material properties of these materials lie on the border between conventional semiconductors and insulators, which adds a degree of complexity to the development of efficient light-emitting devices. A number of technical developments have enabled the fabrication of LEDs based on group three nitrides (III-nitrides) that emit in the UV part of the spectrum, providing useful tools for a wealth of applications in optoelectronic systems.

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Figure 1: Crack-free AlGaN growth using an AlxGaN/AlyGaN strain-relief SL.

© 2002 AIP © 2005 AIP

Figure 2: A micro-pixel UV LED.
Figure 3: Flip-chip UV LED.

© 2002 AIP

Figure 4: External quantum efficiency.

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  1. Department of Electrical Engineering, University of South Carolina, Columbia, 29208, South Carolina, USA

    Asif Khan, Krishnan Balakrishnan & Tom Katona

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Khan, A., Balakrishnan, K. & Katona, T. Ultraviolet light-emitting diodes based on group three nitrides. Nature Photon 2, 77–84 (2008). https://doi.org/10.1038/nphoton.2007.293

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