About the cover

June 2013 Volume 8 No 6

Novel memory devices have been proposed in which the information is stored and transferred by magnetic domain walls that move along magnetic nanoscale tracks. However, one of the main challenges for practical implementation is the difficulty in stopping the domain walls at precise locations in a dynamically controlled way. Now, Bauer and colleagues have demonstrated that a voltage applied to a top electrode can trap and release, on demand, domain walls moving in a magnetic film beneath the electrode (the cover image is a composite of four magneto-optical Kerr effect images taken over a period of 9.8 ms and shows a single domain wall moving from right to left). This all-electrical method to bring fast moving domain walls to a standstill with nanoscale precision allows realization of a three-bit domain-wall memory.

Letter p411 ; News & Views p391