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Nanoelectronics

Transistors arrive at the atomic limit

Nature Nanotechnology volume 7, pages 209–210 (2012)Cite this article

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A single-atom transistor has been made by positioning a phosphorus atom between metallic electrodes, also made of phosphorus, on a silicon surface.

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Figure 1: Schematic of the single-atom transistor made by Simmons and co-workers5.

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Authors and Affiliations

  1. Gabriel P. Lansbergen is at NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan,

    Gabriel P. Lansbergen

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  1. Gabriel P. Lansbergen
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Correspondence to Gabriel P. Lansbergen.

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Lansbergen, G. Transistors arrive at the atomic limit. Nature Nanotech 7, 209–210 (2012). https://doi.org/10.1038/nnano.2012.23

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